Photophysics of Carbon Nanotubes Interfaced with Organic and by Igor A. Levitsky

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By Igor A. Levitsky

Photophysics of Carbon Nanotubes Interfaced with natural and Inorganic fabrics describes actual, optical and spectroscopic homes of the rising classification of nanocomposites shaped from carbon nanotubes (CNTs) interfacing with natural and inorganic fabrics.

The 3 major chapters element novel tendencies in photophysics regarding the interplay of sunshine with a number of carbon nanotube composites from really basic CNT/small molecule assemblies to complicated hybrids comparable to CNT/Si and CNT/DNA nanostructures. the most recent experimental effects are up with distinct discussions and clinical and technological views to supply a via insurance of significant subject matters including:

-Light harvesting, strength conversion, photoinduced cost separation and delivery in CNT dependent nanohybrids

-CNT/polymer composites displaying photoactuation; and

-Optical spectroscopy and constitution of CNT/DNA complexes.

Including unique facts and a brief overview of contemporary study, Photophysics of Carbon Nanotubes Interfaced with natural and Inorganic Materials makes this rising box of photophysics and its purposes to be had to lecturers and pros operating with carbon nanotube composites in basic and utilized fields

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Extra resources for Photophysics of Carbon Nanotubes Interfaced with Organic and Inorganic Materials

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010 Voltage (V) Fig. 19 a Current–voltage (I–V) plot of MWNT/n-Si devices showing the photovoltaic response under low intensity IR light (15 mW/cm2). Inset dark I–V characteristics on a linear scale: x-axis is V and y-axis is mA/cm2; b energy band diagram of MWNT/n-Si heterojunction. Electron affinity, χ, and conduction band offset, ΔEc, for MWNT and n-Si are shown in the energy band diagram [246]. Reprinted with permission from Applied Physics Letters, 2010, 96 (3), 033106, Copyright © 2010 American Institute of Physics Tzolov et al.

So far, MC generation in SWNTs has been observed only for SWNT photodiode in split-gate geometry [166], resulting in formation of p–n junction, similar to Lee’s study [18]. The device demonstrated typical I–V diode characteristics in the dark and under the light for photon energies below 2Eg [166]. When photon energies were above 2Eg several steps in the reverse photocurrent were observed. The origin of these steps has been explained by MC generation of electron–hole pairs by impact ionization from εe2–εh2 bands.

1 %, [209]). As it follows from the report [209], a critical issue for PV performance is the optimal ratio between SiNW diameter, their lengths and separation distance in the array in conjunction with dense polymer infiltration. 22 Schematic of s-SWNT/porous a-Si thin film solar cell. SWNTs are grown directly inside nanoporous a-Si layer with GIAR structure.

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